WAFER PROCESS TECHNOLOGIES
The facility allows 4" and 6" wafer processing. The following lists
available process technologies at the facility.
Lithography
![](pctrs/EVG620.jpg)
- <1um resolution
- EVG 620 Precision Alignment System & Bond Aligner for 4" and 6"
- Karl Suss MA 56 Aligner
Mask Plate Making
Wafer Bonding
![](pctrs/EVG501.jpg)
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EVG 501 Universal Bonder 4" and 6"
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Silicon to glass anodic bonding
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Eutectic bonding
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Thermocompression bonding
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Fusion Bonding
Deep Reactive Ion Etching (DRIE)
![](pctrs/STSDRIE.jpg)
- STS Multiplex ASE HRM System for 4" and 6" wafers, upgradeable to 8"
Plasma Enhanced Chemical Vapor Deposion (PECVD)
- STS Multiplex CVD System for 4" and 6" wafers, upgradeable to 8"
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Silicon Dioxide
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Stress free silicon nitride
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Amorphous silicon
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PhosphoSilicate Glass (PSG)
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BoroPhosphoSilicate Glass (BPSG)
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Reactive Ion Etching (RIE) capability
Reactive Ion Etching (RIE)
- STS Multiplex RIE System for 4" and 6" wafers, upgradeable to 8"
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Silicon Dioxide
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Silicon nitride
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Aluminum
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BCB
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Polyimide
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Non-plasma silicon etching based on Xenon Difluoride (XeF2) gas
Dry / Wet Oxidation
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RCA cleaning prior to high-temperature treatment
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Atmospheric thermal dry oxidation
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Atmospheric thermal wet oxidation
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High temperature drive-in under inert atmosphere
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5 furnaces, THERMCO
Diffusion
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Boron diffusion using BBr3 and B2H6 gases
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Phosphorus diffusion using POCl3 gas
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26 furnaces, THERMCO
Etching
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Silicon dioxide etching with BHF solution
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Silicon nitride etching
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Anisotropic silicon etching using KOH, TMAH, and EDP
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Isotropic silicon etching using HNA
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Electrochemical etching using KOH and TMAH solutions
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Metal etching: Al, Cu, Ti, Ni, Cr, Au
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Resist stripping in organic solvents
Plasma Etching
Electroplating (FIBRoplate process, uniformly on 4" & 6"
wafers)
![](pctrs/FIBRO.jpg)
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Nickel electroplating
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Copper electropating
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Gold electroplating
![](gyroscope/Fig3.jpg)
Nickel electroplated comb fingers.
Nickel electroplated comb fingers with 4um spacing.
![](pctrs/electroplate2.jpg)
High-aspect ratio nickel electroplated comb fingers with 4um-spacing.
SU-8 molding (Under development)
![](pctrs/SU8.gif)
SU-8 patterns. Feature size: 5-20 um, height: 35-40 um.
Evaporation and Sputterring (Al, Au, Au/As, Ni, Cr, Ni-Cr, Cu,
Ti)
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VARIAN 3119 e-gun source system & BALZERS BAS 450 PM planar magnetron
sputtering system
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BALZERS BAS 450 PM planar magnetron sputtering system
Passivation
Metrology
![](pctrs/FTIR.jpg)
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Veeco Dektak 8 Profiler
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Veeco Wyko NT 1100 Profiler
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FTIR-210 IR-VASE Elipsometer
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Nanospec/AFT Computerized Film Thickness Measurement System
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Magnetron Model M-700 Four Point Probe System
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JEOL Scanning Electron Microscope (SEM)
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Karll Suss PM5 Manual Probe Station with Laser Cutter
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Airborn particle scanner
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Optical inspection x100
Wafer Dicing
![](pctrs/DAD321.jpg)
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DISCO DAD 3350
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DISCO DAD 321
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Silicon, glass, silicon-to-glass bonded and GaAs substrates
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Dicing
Request Form
Wire-Bonding
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Kluicke & Soffa Manual Gold Wire-Bonder
Back-lapping (SPEEDFAM)